| 摘要 |
The present invention provides a method for etching an organic film capable of accurately transferring a pattern of a hard mask layer at a fast etching rate. An organic film (1) whose surface is selectively protected by a hard mask layer (2) is etched. A partial etching process and a film formation process are repeatedly performed. During the partial etching process, mixed gas of gas which anisotropically etches a silicon oxide film and gas which does not etch the silicon oxide film but isotropically etches the organic film (1) is used to etch the organic film (1) up to a portion of a film thickness of the organic film (1). Additionally, during the film formation process, a protective film (3) comprised of a silicon oxide film is grown on a side surface (12) and a lower surface (11) of a concave unit (10) formed during the partial etching process and the hard mask layer (2). |
