| 摘要 |
The present invention provides an etching method for selectively etching a first area composed of silicon oxide with respect to a second area composed of silicon nitride. The etching method comprises process (a) and process (b). In the process (a), an object to be processed is exposed to a plasma of fluorocarbon gas, and a protective film thicker than a protective film formed on the first area is formed on the second area. In the process (b), the first area is etched by the plasma of the fluorocarbon gas. In the process (a), the temperature of the object to be processed is set to be in the range of 60-250°C. |
