发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF PREVENTING LATCH-UP IN A CHARGE PUMP CIRCUIT |
摘要 |
A charge pump circuit includes a substrate and first well region formed in the substrate. A first transistor includes first and second conduction regions disposed in the first well region. A second well region is formed in the substrate. A third well region is formed within the second well region. A second transistor includes first and second conduction regions disposed in the third well region. The second well region and third well region are coupled to a common terminal. The common terminal receives a local potential and the first well region and second well region are commonly maintained at the local potential. The first transistor and second transistor operate within the charge pump cell. A plurality of charge pump cells can be cascaded together with an output of a first charge pump cell coupled to an input of a second charge pump cell. |
申请公布号 |
EP2909860(A2) |
申请公布日期 |
2015.08.26 |
申请号 |
EP20130848087 |
申请日期 |
2013.10.02 |
申请人 |
SEMTECH CORPORATION;AEBISCHER, DANIEL;CHEVROULET, MICHEL |
发明人 |
AEBISCHER, DANIEL;CHEVROULET, MICHEL |
分类号 |
H01L27/092;H01L21/8238;H02M3/07 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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