| 摘要 |
<p>This compound semiconductor substrate has, on a second GaP window layer, a light emitting layer configured of a double hetero structure composed of a lower cladding layer represented by the formula of (AlxGa1-x)yIn1-yP (0<x<1, 0<y<1), an active layer, and an upper cladding layer, and has a first GaP window layer on the light emitting layer. The compound semiconductor substrate is characterized in that the lattice constants of the lower cladding layer, the active layer, and the upper cladding layer match such that respective differences (??) between a Bragg angle on the (400) plane of a GaAs single crystal and respective Bragg angles on the (400) planes of the lower cladding layer, the active layer and the upper cladding layer are within the range of 50"-200" at a room temperature. Consequently, the high-quality compound semiconductor substrate is provided, said semiconductor substrate having improved light emitting service life characteristics, less variance of the light emitting service life characteristics within the plane, and furthermore, improved luminance.</p> |
