SPLIT GATE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a split gate memory device which needs less number of treatment steps than a traditional baseline process, and to a method of fabricating the device. A symmetric word gate/select gate (SG) pair is formed around a sacrificing spacer. An SG structure formed as the result has a distinguishable non-planar upper surface. A spacer layer covering a select gate also follows the shape of the SG upper surface. A dielectric body arranged on a dielectric layer between gates and arranged between neighboring sidewalls of each memory gate and select gate insulates between the same.