发明名称 ワイヤボンディング方法
摘要 PROBLEM TO BE SOLVED: To certainly perform wire cut to a wire after bonding without damaging a base part consisting of silicon which is a foundation of a pad in a wire bonding method for connecting the wire to the pad for wire bonding provided on one surface side of a silicon component consisting of silicon by wedge bonding.SOLUTION: In a wire cut process, plasma irradiation means 200 for heating a wire 30 to be fused is used, and a come off part 30b in the wire 30 is fused to be torn off from a bonded part 30a while continuing heating by irradiating the come off part 30b with plasma from a direction Y in parallel with one surface 21a of a base part 21 consisting of silicon by a torch 210 of the plasma irradiation means 200 while pulling the come off part 30b upward than the connection part 30a in the wire 30 so that the come off part 30b becomes a state of floating from one surface 21a of the base part 21.
申请公布号 JP5768675(B2) 申请公布日期 2015.08.26
申请号 JP20110250742 申请日期 2011.11.16
申请人 株式会社デンソー 发明人 渡辺 健史
分类号 H01L21/60 主分类号 H01L21/60
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