TRENCH DMOS DEVICE WITH IMPROVED TERMINATION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS

摘要

A termination structure is provided for a semiconductor device. The termination structure includes a semiconductor substrate having an active region and a termination region. A termination trench is located in the termination region and extends from a boundary of the active region toward an edge of the semiconductor substrate. A MOS gate is formed on a sidewall of the termination trench adjacent the boundary. At least one guard ring trench is formed in the termination region on a side of the termination trench remote from the active region. A termination structure oxide layer is formed on the termination trench and the guard ring trench. A first conductive layer is formed on a backside surface of the semiconductor substrate. A second conductive layer is formed atop the active region and the termination region.