HIGH GROWTH RATE PROCESS FOR CONFORMAL ALUMINUM NITRIDE

摘要

Provided is a method for depositing a conformal aluminum nitride membrane on semiconductor substrates. The disclosed methods comprise the steps of: (a) exposing a substrate to an aluminum-containing precursor; (b) purging the aluminum-containing precursor during a period not enough to substantially remove whole the aluminum-containing precursor in a gas phase; (c) exposing the substrate to a nitrogen-containing precursor for forming aluminum nitride; (d) purging the nitrogen-containing precursor; and (e) repeating from step (a) to step (d). The increased growth rate, step coverage of 100%, and conformity are achieved.