发明名称 レジスト組成物、レジストパターン形成方法、高分子化合物、新規な化合物
摘要 PROBLEM TO BE SOLVED: To provide a resist composition, a method for forming a resist pattern, a polymer compound, and a novel compound.SOLUTION: A resist composition which generates an acid by exposure and a solubility of which in a developer is changed by an action of an acid. The composition contains a base component (A) whose solubility in a developer is changed by an action of an acid. The base component (A) contains a resin component (A1) having a structural unit (a0-1) represented by formula (a0-1). In the formula, R represents a hydrogen atom, a 1-5C alkyl group or a 1-5C halogenated alkyl group.
申请公布号 JP5767944(B2) 申请公布日期 2015.08.26
申请号 JP20110236182 申请日期 2011.10.27
申请人 東京応化工業株式会社 发明人 内海 義之
分类号 G03F7/039;C08F212/14 主分类号 G03F7/039
代理机构 代理人
主权项
地址