发明名称 SURFACE MODIFIED TSV STRUCTURE AND METHODS THEREOF
摘要 Microelectronic elements and methods of their manufacture are disclosed. A microelectronic element may include a substrate including an opening extending through a semiconductor region of the substrate, a dielectric layer cover a wall of the opening within at least a first portion of the opening, a first metal disposed within the first portion of the opening, a second metal disposed within a second portion of the opening. The second metal may form at least part of a contact of the microelectronic element.
申请公布号 KR20150097706(A) 申请公布日期 2015.08.26
申请号 KR20157019296 申请日期 2013.12.18
申请人 INVENSAS CORPORATION 发明人 HABA BELGACEM;AYATOLLAHI FATIMA LINA;NEWMAN MICHAEL;MONADGEMI PEZHMAN
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
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