NANO-STURUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

An embodiment of the present invention provides a nano-structure semiconductor light emitting device, which includes: a base layer composed of a first conductivity type semiconductor; a mask layer which is arranged on the first conductivity type semiconductor base layer, and has multiple opening parts through which the first conductivity type semiconductor base layer is exposed; a plurality of nano light emitting structures disposed on the opening parts, and individually including a nanocore which is made of a first conductivity type semiconductor, an active layer and a second conductivity type semiconductor layer; and a polycrystalline current restraining layer which is arranged on the mask layer so that at least a part thereof can be located under the second conductivity type semiconductor layer.