| 摘要 |
A halogen-free organic layer (12) is formed on a substrate (Z) using a coating material and a silicon nitride layer (14) is formed on the organic layer (12) by plasma CVD. By means of this structure, provided are a functional film production method by which it is possible to stably produce a high-performance functional film, such as a gas barrier film having high gas-barrier performance, and a functional film. |
