| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology inexpensively performing uniformly distributed treatment on a surface of a large treatment object. <P>SOLUTION: A plasma treatment apparatus includes a radical ejector 10 which is prepared movably relative to a substrate 5, which discharges the treatment gas supplied from a treatment gas supply source 8 and ejects the radical of the treatment gas to the substrate 5. The radical ejector has: first to fourth diffusion chambers 11-41 in which plasma of treatment gas from the treatment gas supply source 8 is respectively supplied, and their atmospheres are isolated from each other; and a plasma forming chamber 51 for mixing the plasma of the treatment gas diffused in the first to fourth diffusion chambers 11-41. Slits 53 orthogonal to the relatively moving direction of the substrate 5 are formed in the plasma forming chamber 51. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
