導体または半導体基板上に堆積させたカーボンナノチューブマットの製造方法

摘要

The process comprises depositing a catalytic complex comprising a metal layer on the substrate, performing oxidation treatment on the metal layer at ambient temperature using plasma or succession of plasmas, and growing the carbon nanotubes from a part of oxidized metal layer. The metal layer is deposited on an amorphous silicon layer, which is deposited on the substrate. The treatment comprises a first step of oxidation using a first plasma with first energy and pressure, and a second step of oxidation using a second plasma with second energy. The process comprises depositing a catalytic complex comprising a metal layer on the substrate, performing oxidation treatment on the metal layer at ambient temperature using plasma or succession of plasmas, and growing the carbon nanotubes from a part of oxidized metal layer. The metal layer is deposited on an amorphous silicon layer, which is deposited on the substrate. The treatment comprises a first step of oxidation using a first plasma with first energy and pressure, and a second step of oxidation using a second plasma with second energy, which is lower than the first energy and a second pressure that is greater than the first pressure. An independent claim is included for a process for producing a via to interconnect first and second conductive layers.