发明名称 |
METHOD OF FABRICATION OF AI/GE BONDING IN A WAFER PACKAGING ENVIRONMENT AND A PRODUCT PRODUCED THEREFROM |
摘要 |
A wafer structure comprising a first substrate comprising a cover wafer, the first substrate including at least one patterned germanium layer; and a second substrate, the second substrate including at least one patterned aluminum layer; characterized in that the at least one patterned germanium layer is bonded to a first portion of the at least one patterned aluminum layer to provide a eutectic alloy and create an electrical and mechanical contact; characterized in that a second portion of the at least one patterned aluminum layer is not bonded to the at least one patterned germanium layer and forms an external bond pad; and characterized in that the first substrate and second substrate form a cavity containing a MEMS structure within the bonded at least one germanium layer and first portion of the at least one patterned aluminum layer. |
申请公布号 |
EP2910522(A1) |
申请公布日期 |
2015.08.26 |
申请号 |
EP20150161041 |
申请日期 |
2006.03.09 |
申请人 |
INVENSENSE, INC. |
发明人 |
NASIRI, STEVEN;FLANNERY, ANTHONY |
分类号 |
B81C1/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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