| 摘要 |
<p>In this method for manufacturing a semiconductor device having an optical conversion element (PD), which has the topmost surface thereof planarized without making a step complicated, and improved optical characteristics, such as suppressed color unevenness, a topmost layer metal layer (AL3) is formed in both the effective chip region (AA) having the photoelectric conversion element (PD) formed therein, and the effective chip outside region (NAA), said effective chip region and effective chip outside region being on the main surface of a semiconductor substrate (SUB). The topmost layer metal layer (AL3) in the effective chip region (AA) is patterned, and the topmost layer metal layer (AL3) in the whole effective chip outside region (NAA) is removed. An interlayer insulating layer (II4) is formed in both the effective chip region (AA) and the effective chip outside region (NAA) such that the patterned topmost layer metal layer (AL3) in the effective chip region (AA) is covered. After removing a part of the upper surface of the interlayer insulating layer (II4) by selective etching, said part being positioned directly above the topmost layer metal layer (AL3) that has been patterned in the effective chip region (AA), the upper surface of the interlayer insulating layer (II4) is planarized.</p> |
