发明名称 |
RESISTIVE MEMORY CELL STRUCTURES AND METHODS |
摘要 |
Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material. |
申请公布号 |
EP2805351(A4) |
申请公布日期 |
2015.08.26 |
申请号 |
EP20130739105 |
申请日期 |
2013.01.18 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
PELLIZZER, FABIO;BEDESCHI, FERDINANDO |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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