发明名称 RESISTIVE MEMORY CELL STRUCTURES AND METHODS
摘要 Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material.
申请公布号 EP2805351(A4) 申请公布日期 2015.08.26
申请号 EP20130739105 申请日期 2013.01.18
申请人 MICRON TECHNOLOGY, INC. 发明人 PELLIZZER, FABIO;BEDESCHI, FERDINANDO
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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