| 摘要 |
<p>The present invention relates to a thin film deposition apparatus for a transparent indium-tin oxide (ITO) conductive film. By using a sputter system for a light-emitting diode(LED), the concentration of the thin film which is intensively deposited on a process chamber can be raised in order to reduce the consumption of the thin film onto a target. To achieve this, the present invention, relating specifically to a sputter device comprising a load-lock chamber for the deposition of the ITO thin conductive film, an orient chamber, a transfer chamber, and a process chamber, includes: a matcher box for generating RF plasma in the process chamber; an LID module of a source part comprising a magnet rotation module, a magnet unit, and a target; a main chamber comprising a shield unit, a heater unit, and a heater lift unit; and a cryo-pump.</p> |
