| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve a problem that since gate tunnel leakage current is increased in the up-to-date process, a semiconductor device needs to be in a standby mode at a low leakage current. <P>SOLUTION: The semiconductor device includes a plurality of static memory cells of CMOS constitution each having first and second P-type MOSs, and first and second N-type MOSs, and a supply voltage control circuit having a third N-type MOS as a control circuit for controlling power supply voltages of the plurality of static memory cells which are potential differences between a power supply line and a source line. In a drain region of the first N-type MOS, a region to be contacted contains arsenic and an extension region contains phosphorus. In a drain region of the second N-type MOS, a region to be contacted contains arsenic and an extension region contains phosphorus. In a drain region of the third N-type MOS, a region to be contacted and an extension both contain arsenic. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
