| 摘要 |
<p>Disclosed are a non-overlapped integral capacitive touch screen with an ITO (indium tin oxide) layer and the manufacturing method thereof. The non-overlapped integral capacitive touch screen with the ITO layer comprises a transparent substrate, and a silicon dioxide layer, a niobium pentoxide layer, a black resin layer, ITO electrodes and an insulating layer sequentially laminated on the transparent substrate. The silicon dioxide layer convers the transparent substrate completely, and the niobium pentoxide layer covers the silicon dioxide layer completely. The ITO electrodes are horizontally or vertically conductive electrodes having regular graphic structures. The ITO electrodes include the first ITO conductive electrode and the second ITO conductive electrode, and the first ITO conductive electrode and the second ITO conductive electrode are positioned on the same plane, independent and insulated mutually and are staggered. The transparent substrate comprises a windowing region and a non-windowing region, and the black resin layer covers the non-windowing region of a display screen. Since the laminated structure of the capacitive touch screen is designed reasonably, transmittance of the capacitive touch screen is improved effectively, visibility of ITO graphics is lowered, and reliability of the touch screen is improved further.</p> |
