Anode connection structure of organic light-emitting diode and manufacturing method thereof

摘要

The present invention provides an anode connection structure of an organic light-emitting diode and a manufacture method thereof. The structure includes: a thin-film transistor (20) and an anode (40) of an organic light-emitting diode arrange don the thin-film transistor (20). The thin-film transistor (20) includes a low-temperature poly-silicon layer (24) formed on a substrate (22), a gate insulation layer (26) formed on the low-temperature poly-silicon layer (24), a gate formed on the gate insulation layer (26), a protection layer (27) formed on the gate, and a source/drain (28) formed on the protection layer (27). The anode (40) of the organic light-emitting diode is connected to the low-temperature poly-silicon layer (24). The present invention makes the anode of the organic light-emitting diode directly connected to the low-temperature poly-silicon layer of the thin-film transistor in order to shorten the distance between two adjacent switching thin-film transistors, increase the number of pixels in a unit area (each inch), and improve the resolution of a panel using the anode connection structure of the organic light-emitting diode.

主权项

1. An anode connection structure of an organic light-emitting diode, comprising: a thin-film transistor and an anode of an organic light-emitting diode arranged on the thin-film transistor, the thin-film transistor comprising a low-temperature poly-silicon layer formed on a substrate, a gate insulation layer formed on the low-temperature poly-silicon layer, a gate formed on the gate insulation layer, a protection layer formed on the gate, and a source/drain formed on the protection layer, the anode of the organic light-emitting diode being connected to the low-temperature poly-silicon layer through direct engagement between the anode and the low-temperature poly-silicon layer without a part of the source/drain interposed therebetween.