| 发明名称 | Solid-state imaging apparatus, manufacturing method for the same, and electronic apparatus | ||
| 摘要 | A solid-state imaging apparatus includes a semiconductor substrate, an upper layer film, and on-chip lenses. On the semiconductor substrate, a plurality of pixels are formed. The upper layer film is laminated on the semiconductor substrate. The on-chip lenses are formed on the upper layer film so as to correspond to the respective pixels. A pupil correction amount of one of the on-chip lenses is changed depending on a distance between a center of a pixel area and the on-chip lens, and depending on a film thickness of the upper layer film at a position of the on-chip lens on the upper layer film. | ||
| 申请公布号 | US9117719(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201314035638 | 申请日期 | 2013.09.24 |
| 申请人 | SONY CORPORATION | 发明人 | Saito Hiromasa |
| 分类号 | H01L27/146 | 主分类号 | H01L27/146 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A solid-state imaging apparatus, comprising: a semiconductor substrate on which a plurality of pixels is formed; an upper layer film varying in thickness and laminated on the semiconductor substrate; and on-chip lenses formed on the upper layer film so as to correspond to respective pixels, a pupil correction amount of at least one of the on-chip lenses being changed depending on a distance between a center of a pixel area and the at least one on-chip lens, and depending on the film thickness of the upper layer film at a position of the at least one on-chip lens on the upper layer film, wherein the film thickness of the upper layer film at the position of the at least one on-chip lens is the distance between the at least one on-chip lens and the semiconductor substrate. | ||
| 地址 | JP | ||