Method for in-situ dry cleaning, passivation and functionalization of Ge semiconductor surfaces

摘要

A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion.

主权项

1. A method for in-situ dry cleaning of a Ge containing semiconductor surface other than SiGe, comprising:
in a vacuum chamber, exposing the Ge containing semiconductor surface to H2O2 vapor to form an oxygen monolayer(s) and promote removal of carbon from the surface; and in the vacuum chamber, annealing the Ge containing semiconductor surface at a temperature below that which would induce dopant diffusion.