Semiconductor light emitting devices grown on composite substrates

摘要

A plurality of III-nitride semiconductor structures, each including a light emitting layer disposed between an n-type region and a p-type region, are grown on a composite substrate. The composite substrate includes a plurality of islands of III-nitride material connected to a host by a bonding layer. The plurality of III-nitride semiconductor structures are grown on the III-nitride islands. The composite substrate may be formed such that each island of III-nitride material is at least partially relaxed. As a result, the light emitting layer of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms.

主权项

1. A method comprising: growing a plurality of III-nitride semiconductor structures on a substrate, wherein: each semiconductor structure comprises a light emitting region disposed between an n-type region and a p-type region, wherein the light emitting region comprises a first quantum well, a second quantum well, and a barrier disposed between the first and second quantum wells: the substrate comprises a host, a plurality of islands of III-nitride material separated by trenches, wherein the trenches extend through an entire thickness of III-nitride material that forms the semiconductor structures, and a bonding layer disposed between the host and the plurality of islands of III-nitride material, the bonding layer comprising one of glass, borophosphorosilicate glass, SiOx, SiO2, SiNX, Si3N4, HfO2, Mo, Ti, TiN, and dielectric; and the light emitting region of each semiconductor structure has an a-lattice constant greater than 3.19 angstroms; forming a conductive material that electrically connects two of the III-nitride semiconductor structures; and after growing the plurality of III-nitride semiconductor structures on the substrate, removing the host.