Semiconductor device, inverter device provided with semiconductor device, and in-vehicle rotating electrical machine provided with semiconductor device and inverter device

摘要

Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.

主权项

1. A semiconductor device, comprising:
a first base plate comprising a conductor; a first semiconductor element having a first electrode surface that is electrically joined onto the first base plate via a joining material; a second base plate comprising a conductor, the second base plate being away from the first base plate; a second semiconductor element that is adjacent to the first semiconductor element and has a first electrode surface that is electrically joined onto the second base plate via a joining material; a first lead for electrically joining a second electrode surface of the first semiconductor element and the second base plate via a joining material; a current path member for sending and receiving current flowing through both the first semiconductor element and the second semiconductor element to and from outside, the current path member being away from both the first base plate and the second base plate; a second lead for electrically joining a second electrode surface of the second semiconductor element and the current path member via a joining material; and a sealing material for sealing at least the respective structural members, wherein: a rigidity of the second base plate is higher than each of a rigidity of the first lead and a rigidity of the second lead; a boundary line including a gap portion along which the first semiconductor element and the second semiconductor element are opposed to each other and extending in a direction in which both the first semiconductor element and the second semiconductor element are not opposed to each other intersects the second base plate without intersecting the first lead and the second lead; and the first lead extends from a joining portion with the first semiconductor element in a first direction, and the second lead extends from a joining portion with the second semiconductor element in a second direction, which is opposite to the first direction.