Semiconductor integrated circuit having a resistor and method of forming the same

摘要

The present application discloses a semiconductor integrated circuit including a substrate having electrical devices formed thereon, a local interconnection layer formed over the substrate, and a global interconnection layer formed over the local interconnection layer. The local interconnection layer has a first set of conductive structures arranged to electrically connect within the individual electrical devices, among one of the electrical devices and its adjacent electrical devices, or vertically between the devices and the global interconnection layer. At least one of the first set of conductive structures is configured to have a resistance value greater than 50 ohms. The global interconnection layer has a second set of conductive structures arranged to electrically interconnect the electrical devices via the first set conductive structures.

主权项

1. A semiconductor integrated circuit, comprising:
a substrate having electrical devices formed thereon, wherein at least one electrical device of the electrical devices is part of an electrostatic discharge (ESD) protection circuit; a local interconnection layer formed over the substrate; and a global interconnection layer formed over the local interconnection layer, the local interconnection layer having a first set of conductive structures arranged to electrically connect:
within the electrical devices,among one of the electrical devices and an adjacent one of the electrical devices, orvertically between the electrical devices and the global interconnection layer, andat least one conductive structure of the first set of conductive structures is a resistor having a resistance value greater than 50 ohms, and the global interconnection layer having a second set of conductive structures arranged to electrically interconnect the electrical devices via the first set conductive structures, wherein a resistance value of the at least one conductive structure of the first set of conductive structures is determined based on a unit resistance value multiplied by a ratio of a length of the at least one conductive structure of the first set of conductive structures to a width of the at least one conductive structure of the first set of conductive structures, and the unit resistance value is equal to or greater than 5 ohms.