Methods of forming patterns and methods of manufacturing semiconductor devices using the same

摘要

An insulation layer is formed on a substrate. A first mask is formed on the insulation layer. The first mask includes a plurality of line patterns arranged in a second direction. The plurality of line patterns extend in a first direction substantially perpendicular to the second direction. A second mask is formed on the insulation layer and the first mask. The second mask includes an opening partially exposing the plurality of line patterns. The opening has an uneven boundary at one of a first end portion in the first direction and a second end portion in a third direction substantially opposite to the first direction. The insulation layer is partially removed using the first mask and the second mask as an etching mask, thereby forming a plurality of first trenches and second trenches. The plurality of first trenches and the second trenches are arranged in a staggered pattern.

主权项

1. A method of forming a conductive pattern for forming a semiconductor device, the method comprising:
forming an insulation layer on a substrate; forming a first mask on the insulation layer, the first mask including a plurality of line patterns arranged in a second direction, the plurality of line patterns extending in a first direction substantially perpendicular to the second direction; forming a second mask on the insulation layer and the first mask, the second mask including an opening partially exposing the plurality of line patterns, the opening having an uneven boundary at one of a first end portion thereof in the first direction and a second end portion thereof in a third direction substantially opposite to the first direction; partially removing the insulation layer using the first mask and the second mask as an etching mask, thereby forming a plurality of first and second trenches, the plurality of first and second trenches arranged in a staggered pattern; and filling the plurality of first and second trenches using a conductive material.