Current aperture diode and method of fabricating same

摘要

A diode and a method of making same has a cathode an anode and one or more semiconductor layers disposed between the cathode and the anode. A dielectric layer is disposed between at least one of the one or more semiconductor layers and at least one of the cathode or anode, the dielectric layer having one or more openings or trenches formed therein through which the at least one of said cathode or anode projects into the at least one of the one or more semiconductor layers, wherein a ratio of a total surface area of the one or more openings or trenches formed in the dielectric layer at the at least one of the one or more semiconductor layers to a total surface area of the dielectric layer at the at least one of the one or more semiconductor layers is no greater than 0.25.

主权项

1. A diode comprising:
a cathode; an anode; a plurality of semiconductor layers disposed between said cathode and said anode, said plurality of semiconductor layers forming a heterointerface between two of said plurality of semiconductor layers, and wherein said two semiconductor layers are formed of different materials, one material of said two semiconductor layers having a higher bandgap than a material of the other of said two semiconductor layers, with the semiconductor layer formed of the higher bandgap material being disposed (i) closer to a main portion of said anode and (ii) further from said cathode than the semiconductor layer formed of said other material; and a dielectric layer disposed between the semiconductor layer having the higher bandgap material and the main portion of said anode, the dielectric layer having one or more openings or trenches formed therein through which said anode projects into said at least said semiconductor layer having the higher bandgap material.