发明名称 |
Apparatus, method and program for manufacturing nitride film |
摘要 |
A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film. |
申请公布号 |
US9117660(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201214238289 |
申请日期 |
2012.05.22 |
申请人 |
SPP Technologies Co., Ltd. |
发明人 |
Murakami Shoichi;Hatashita Masayasu |
分类号 |
H01L21/02;C23C16/34;C23C16/509;H01L21/66 |
主分类号 |
H01L21/02 |
代理机构 |
Mots Law, PLLC |
代理人 |
Motsenbocker Marvin A.;Mots Law, PLLC |
主权项 |
1. A nitride film manufacturing apparatus for forming a nitride film on a substrate provided in a chamber by a plasma CVD technique, the apparatus comprising:
a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film. |
地址 |
Tokyo JP |