发明名称 Apparatus, method and program for manufacturing nitride film
摘要 A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
申请公布号 US9117660(B2) 申请公布日期 2015.08.25
申请号 US201214238289 申请日期 2012.05.22
申请人 SPP Technologies Co., Ltd. 发明人 Murakami Shoichi;Hatashita Masayasu
分类号 H01L21/02;C23C16/34;C23C16/509;H01L21/66 主分类号 H01L21/02
代理机构 Mots Law, PLLC 代理人 Motsenbocker Marvin A.;Mots Law, PLLC
主权项 1. A nitride film manufacturing apparatus for forming a nitride film on a substrate provided in a chamber by a plasma CVD technique, the apparatus comprising: a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
地址 Tokyo JP