发明名称 |
Field focusing features in a ReRAM cell |
摘要 |
A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters (911, 1211) including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode. |
申请公布号 |
US9118008(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201414301900 |
申请日期 |
2014.06.11 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
Zhou Feng;Baker, Jr. Frank K.;Chang Ko-Min;Hong Cheong Min |
分类号 |
H01L21/00;H01L45/00 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
Dolezal David G. |
主权项 |
1. A method for forming a resistive random access memory (ReRAM) cell, comprising:
forming a first conductive layer; forming a dielectric storage material layer over the first conductive layer, the dielectric storage material layer conducive to the formation of conductive filaments during an application of a filament forming voltage to the ReRAM cell; forming a second conductive layer over the dielectric storage material layer; forming a layer of conductive nanoclusters including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive layer or the second conductive layer, wherein the ReRAM cell includes a first plurality of the conductive nanoclusters of the layer of conductive nanoclusters; wherein the forming a layer of conductive nanoclusters includes forming the layer of conductive nanoclusters by process wherein conductive nanoclusters of the plurality of nanoclusters nucleate and grow; wherein the first plurality of conductive nanoclusters of the layer of conductive nanoclusters are further characterized as field focusing features of the ReRAM cell. |
地址 |
Austin TX US |