Magnetoresistance element and magnetic memory

摘要

A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.

主权项

1. A magnetoresistance element comprising:
a first magnetic layer having a first surface and a second surface being opposite to the first surface; a second magnetic layer; an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer; a first layer which is provided on the second surface of the first magnetic layer, the first layer containing B and at least one element selected from Hf, Al, Mg, and Ti and having a third surface and a fourth surface being opposite to the third surface, the third surface facing the second surface; a second layer which is provided on the fourth surface of the first layer, the second layer containing B and at least one element selected from Hf, Al, and Mg and having a fifth surface and a sixth surface being opposite to the fifth surface, the fifth surface facing the fourth surface; and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the second layer.