Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same

摘要

A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

主权项

1. An organic light emitting diode (OLED) display device, comprising:
a substrate; a semiconductor layer disposed on the substrate, and comprising a channel region, source and drain regions, and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; source and drain electrodes disposed on the second insulating layer, and electrically connected to the source and drain regions of the semiconductor layer, respectively; a first electrode electrically connected to one of the source and drain electrodes; an organic layer disposed on the first electrode and comprising an emission layer; and a second electrode disposed on the organic layer, wherein a sum of thicknesses of portions of the gate insulating layer and the first insulating layer disposed on the source and drain regions is less than a vertical penetration depth of ions implanted in the source and drain regions.