Semiconductor packages and methods of packaging semiconductor devices

摘要

A method of forming semiconductor assemblies is disclosed. The method includes providing an interposer with through interposer vias. The interposer includes a first surface and a second surface. The through interposer vias extend from the first surface to the second surface of the interposer. A first die is mounted on the first surface of the interposer. The first die comprises a first surface with first conductive contacts thereon. The interposer comprises material with coefficient of thermal expansion (CTE) similar to that of the first die. The first conductive contacts of the first die are coupled to the through interposer vias on the first surface of the interposer.

主权项

1. A method of forming semiconductor assemblies, the method comprising:
providing an interposer substrate prepared with a plurality of interposers with through interposer vias, the interposer substrate comprises a first surface and a second surface, wherein
the through interposer vias extend from the first surface to the second surface of the interposer substrate,the first and second surfaces of the interposer substrate comprise interposer contact pads thereon, the through interposer vias facilitate electrical coupling between the interposer contact pads on the first and second surfaces of the interposer substrate, andthe second surface of the interposer substrate comprises interposer contacts disposed thereon, the interposer contacts are configured to facilitate coupling between the interposer contact pads and an external device; mounting a plurality of first dies to first die attach regions on the first surface of the interposer substrate, the first die comprises a first surface with first conductive contacts thereon, wherein the interposer substrate comprises material with coefficient of thermal expansion (CTE) similar to that of the first die, the first conductive contacts of the first die are coupled to the through interposer vias on the first surface of the interposer substrate; and singulating the interposer substrate with mounted first dies into individual semiconductor assemblies.