发明名称 Feedforward/feedback litho process control of stress and overlay
摘要 A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
申请公布号 US9116442(B2) 申请公布日期 2015.08.25
申请号 US201113336370 申请日期 2011.12.23
申请人 KLA-Tencor Corporation 发明人 Adel Michael;Fielden John;Widmann Amir;Robinson John;Choi Dongsub
分类号 G03F7/20 主分类号 G03F7/20
代理机构 JDI Patent 代理人 Isenberg Joshua D.;JDI Patent
主权项 1. A method for process control in patterning a substrate, comprising: a) performing metrology on the substrate either before or after performing a patterning process on the substrate; b) generating one or more correctables to the patterning process based on the metrology performed in a) by performing an analysis of deformation of the substrate across the substrate at a spatial resolution of about 1 mm to about 5 mm; and either c) adjusting the patterning process performed on the substrate with the correctables, if the metrology is performed before the patterning process; or d) adjusting the patterning process performed on a subsequent substrate with the correctables, if the metrology is performed after the patterning process; or e) both c) and d).
地址 San Jose CA US