发明名称 |
Feedforward/feedback litho process control of stress and overlay |
摘要 |
A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables. |
申请公布号 |
US9116442(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201113336370 |
申请日期 |
2011.12.23 |
申请人 |
KLA-Tencor Corporation |
发明人 |
Adel Michael;Fielden John;Widmann Amir;Robinson John;Choi Dongsub |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
JDI Patent |
代理人 |
Isenberg Joshua D.;JDI Patent |
主权项 |
1. A method for process control in patterning a substrate, comprising:
a) performing metrology on the substrate either before or after performing a patterning process on the substrate; b) generating one or more correctables to the patterning process based on the metrology performed in a) by performing an analysis of deformation of the substrate across the substrate at a spatial resolution of about 1 mm to about 5 mm; and either c) adjusting the patterning process performed on the substrate with the correctables, if the metrology is performed before the patterning process; or d) adjusting the patterning process performed on a subsequent substrate with the correctables, if the metrology is performed after the patterning process; or e) both c) and d). |
地址 |
San Jose CA US |