Manufacturing method of light barrier glass sheet

摘要

A manufacturing method of a light barrier glass sheet, comprising: farming a metal layer (2) on a glass substrate (1); coating a first photoresist layer (3) on the metal layer (2), performing first exposure on the first photoresist layer (3) through a half tone mask, then performing first development on the first photoresist layer (3); removing partial region of the metal layer (2) through a first etching process; removing a partial thickness and a partial region of the first photoresist layer (3) through an ashing process; forming an insulating layer (4) on the exposed glass substrate (1), the exposed metal layer (2), the first photoresist layer (3) after the ashing process, and sidewalls of the photoresist layer (3) after the ashing process; removing the first photoresist layer (3), the insulating layer (4) on the first photoresist layer (3), and the insulating layer (4) on the sidewalls of the first photoresist layer (3) by a photoresist lifting-off process so as to form a via hole (7); forming a transparent pixel electrode pattern (5) in the via hole (7), on sidewalls of the via hole (7) and on the insulating layer (4). With the method, one mask process can be omitted, thus the manufacturing process can be simplified, the production efficiency can be improved and the production cost can be reduced.

主权项

1. A manufacturing method of a light barrier glass sheet, comprising the following steps:
forming a metal layer on a glass substrate; coating a first photoresist layer on the metal layer, performing first exposure on the first photoresist layer through a half tone mask, then performing first development on the first photoresist layer so as to form a completely remained region of the first photoresist layer, a half-remained region of the first photoresist layer and a completely removed region of the first photoresist layer which correspond to an opaque region, a half-transmitting region and a completely-transmitting region of the half tone mask, respectively; removing the metal layer corresponding to the completely removed region of the first photoresist layer and portions of the metal layer corresponding to the half-remained region of the first photoresist layer and the completely remained region of the first photoresist layer through a first etching process to expose a partial region of the glass substrate; removing a partial thickness and a partial region of the first photoresist layer which is subjected to the first development through an ashing process to expose a partial region of the metal layer remained after the first etching process; forming an insulating layer on the exposed glass substrate, the exposed metal layer, the first photoresist layer after the ashing process, and sidewalls of the photoresist layer after the ashing process; removing the first photoresist layer after the ashing process, the insulating layer on the first photoresist layer after the ashing process, and the insulating layer on the sidewalls of the first photoresist layer after the ashing process by a photoresist lifting-off process so as to form a via hole on the metal layer to expose partial region of the metal layer corresponding to the via hole; and forming a transparent pixel electrode pattern in the via hole, on sidewalls of the via hole and on the insulating layer.