Thin film transistor and method of manufacturing the same

摘要

A thin film transistor includes a substrate, a gate electrode, a buffer layer, a gate insulating layer, an active layer, an etching stop layer, a source electrode and a drain electrode. The gate electrode is formed on the substrate. The buffer layer partially covers both side portions of the gate electrode. The gate insulating layer covers the gate electrode and the buffer layer. The active layer is formed on the gate insulating layer. The etching stop layer is formed on the active layer, and has a first opening and a second opening on the active layer. The source electrode is formed on the etching stop layer, and contacts with the active layer through the first opening. The drain electrode is formed on the etching stop layer, and is contacted with the active layer through the second opening.

主权项

1. A thin film transistor comprising:
a substrate; a gate electrode disposed on the substrate; a buffer layer partially covering an upper surface and completely covering inclined side surfaces of the gate electrode; a gate insulating layer disposed on the gate electrode and the buffer layer; an active layer disposed on the gate insulating layer; an etching stop layer disposed on the active layer, the etching stop layer comprising a first opening and a second opening; a source electrode disposed on the etching stop layer, the source electrode contacting with the active layer through the first opening; and a drain electrode disposed on the etching stop layer, the drain electrode contacting with the active layer through the second opening, wherein the gate insulating layer is disposed directly on the upper surface of the gate electrode, and the active layer is disposed directly on an upper surface of the gate insulating layer, and a thickness of the buffer layer at the upper surface of the gate electrode is smaller than a thickness of the buffer layer at the inclined side surfaces of the gate electrode, and the gate insulating layer is thinner than the buffer layer and wherein a distance between the gate electrode and the source electrode and a distance between the gate electrode and the drain electrode are increased by the buffer layer.