Oriented crystal nanowire interconnects

摘要

Interconnects for semiconductors formed of materials that exhibit crystallographic anisotropy of the resistivity size effect such that line resistivity in one crystallographic orientation becomes lower than the resistivity in the other directions and methods of fabrication and use thereof are described. A wire having a dimension that results in an increase in the electrical resistivity of the wire can be formed of a material with a conductive anisotropy due to crystallographic orientation relative to the direction of current flow that minimizes the increase in the electrical resistivity as compared to the other orientations at that dimension.

主权项

1. A semiconductor device comprising:
at least one interconnect wire having a length greater than a width or a height, the width and the height being sufficiently small so as to result in an increase in an electrical resistivity of the wire, wherein the at least one interconnect wire has a crystallographic orientation of its crystal or crystals relative to a direction of current flow that minimizes the increase in the electrical resistivity due to the width and the height.