发明名称 Solid-state image sensor with a plurality of pixels for focus detection
摘要 A solid-state image sensor includes a plurality of pixels for focus detection by a phase difference detection scheme. The pixel includes a semiconductor region provided therein with a plurality of photoelectric converters configured so that signals therefrom are independently read out, a microlens, and a lens surface arranged between the microlens and the semiconductor region, wherein the lens surface exerts a negative power on light which passes through the microlens toward the semiconductor region.
申请公布号 US9117718(B2) 申请公布日期 2015.08.25
申请号 US201213353620 申请日期 2012.01.19
申请人 Canon Kabushiki Kaisha 发明人 Ohshitanai Kazuki;Yamashita Yuichiro
分类号 H01L27/146;H04N5/232;H04N5/369;H04N5/3745 主分类号 H01L27/146
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A solid-state image sensor comprising: a plurality of pixels two-dimensionally arrayed in a pixel array that forms an image sensing surface, the plurality of pixels including pixels for focus detection, wherein each of the pixels for focus detection includes: a pixel region having first and second photoelectric converters, the first and second photoelectric converters being arranged apart from each other in a direction parallel to the image sensing surface,a single microlens arranged directly above each of the first and second photoelectric converters, anda portion arranged between the single microlens and the pixel region and including a single lens surface arranged directly above both the first and second photoelectric converters, wherein the portion including the single lens surface as a whole exerts a negative power on light beams that pass through the single microlens, such that the light beams having passed through different regions of a pupil of an imaging lens for forming an object image on the image sensing surface reach the first and second photoelectric converters through the single microlens and the single lens surface.
地址 Tokyo JP