Chamber matching for power control mode

摘要

Systems and methods for performing chamber matching are described. One of the methods for performing chamber matching includes executing a first test within a first plasma chamber to measure a variable and executing a second test within a second plasma chamber to measure the variable. The first and second tests are executed based on one recipe. The method further includes determining a first relationship between the variable measured with the first test and power provided during the first test, determining a second relationship between the variable measured with the second test and power provided during the second test, and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships. The power adjustment causes the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.

主权项

1. A method for performing chamber-to-chamber matching, the method comprising:
executing a first test within a first plasma chamber to measure a variable, wherein the first test is executed under a condition that places the first plasma chamber in a no plasma zone; executing a second test within a second plasma chamber to measure the variable, wherein the first and second tests are executed based on one recipe, wherein the second test is executed under a condition that places the second plasma chamber in the no plasma zone; determining a first relationship between the variable measured with the first test and power provided during the first test; determining a second relationship between the variable measured with the second test and power provided during the second test; and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships, the power adjustment causing the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber, wherein during the processing operation, plasma is stricken within the second plasma chamber.