发明名称 |
Display substrate having a thin film transistor and method of manufacturing the same |
摘要 |
In a method for manufacturing a display substrate, a thin film transistor is formed on a base substrate. The thin film transistor includes a gate electrode, an active pattern, a source electrode and a drain electrode. A first passivation layer is formed to cover the thin film transistor. A second passivation layer is formed on the first passivation layer. A photoresist pattern is formed to partially expose the second passivation layer. The first passivation layer and the second passivation layer are partially removed to form a contact hole exposing the drain electrode. A pixel electrode layer is formed on the second passivation layer, the drain electrode and the photoresist pattern. A portion of the pixel electrode layer and the second photoresist pattern are removed to form a pixel electrode. The portion of the pixel electrode layer is disposed on a top surface and a sidewall of the photoresist pattern. |
申请公布号 |
US9117768(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201414148386 |
申请日期 |
2014.01.06 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
Cho Ki-Hyun;Kim Jeong-Won;Park Kwang-Woo;Park Chul-Won |
分类号 |
H01L21/311;H01L27/12;H01L27/32 |
主分类号 |
H01L21/311 |
代理机构 |
Cantor Colburn LLP |
代理人 |
Cantor Colburn LLP |
主权项 |
1. A method of manufacturing a display substrate, the method comprising:
forming a thin film transistor on a base substrate, the thin film transistor comprising a gate electrode, an active pattern, a source electrode and a drain electrode; forming a first passivation layer covering the thin film transistor; forming a second passivation layer on the first passivation layer; forming a first photoresist pattern partially exposing the second passivation layer; partially removing the first passivation layer and the second passivation layer via dry etching process to form a contact hole exposing the drain electrode, the dry etching process using an etching solution having a higher etch rate with respect to the first passivation layer compared to an etch rate with respect to the second passivation layer; forming a pixel electrode layer on the second passivation layer, the drain electrode and the first photoresist pattern; and removing a portion of the pixel electrode layer and the first photoresist pattern to form a pixel electrode, wherein the portion of the pixel electrode layer is on a top surface and a sidewall of the first photoresist pattern. |
地址 |
KR |