| 发明名称 | Non-local spin valve element with three terminals, hard disk head, and magnetic recording and reproducing apparatus | ||
| 摘要 | A spin valve element according to an embodiment includes: a nonmagnetic base layer; a first terminal including a first magnetic layer connecting to a portion near one of opposing end faces of the nonmagnetic base layer; a second terminal including a second magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal; a third terminal including a third magnetic layer disposed and connecting to the nonmagnetic base layer so as to be at distances from the first and second terminals, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage. | ||
| 申请公布号 | US9117465(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201414338481 | 申请日期 | 2014.07.23 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kamiguchi Yuuzo;Shirotori Satoshi;Sugimura Shinobu;Takagishi Masayuki;Iwasaki Hitoshi |
| 分类号 | G11B5/39;G11B5/35;H01F10/08;G01R33/09;G01R33/12 | 主分类号 | G11B5/39 |
| 代理机构 | Nixon & Vanderhye, P.C. | 代理人 | Nixon & Vanderhye, P.C. |
| 主权项 | 1. A spin valve element comprising: a nonmagnetic base layer; a first terminal including a first magnetic layer, in which a direction of magnetization is switchable, the first terminal connecting to a portion near one of opposing end faces of the nonmagnetic base layer in a direction along which the nonmagnetic base layer extends; a second terminal including a second magnetic layer, in which a direction of magnetization is pinned, the second terminal being disposed and connecting to the nonmagnetic base layer so as to be at a distance from the first terminal along the direction in which the nonmagnetic base layer extends; a third terminal including a third magnetic layer, in which a direction of magnetization is pinned to be antiparallel to the direction of magnetization of the second magnetic layer, the third terminal being disposed and connecting to the nonmagnetic base layer so as to be at distances from the first terminal and the second terminal along the direction in which the nonmagnetic base layer extends, the second terminal and the third terminal connecting to a current source that passes a sense current, and the first terminal and one of the second terminal and the third terminal connecting to a voltage detection unit that detects a voltage. | ||
| 地址 | Tokyo JP | ||