发明名称 SEMICONDUCTOR DEVICE HAVING STABLE GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要 The present invention relates to a semiconductor device having stable gate structure and a method for manufacturing the same. In a gate structure which has a micro gate foot having a linewidth of 0.2μm or less and a gate head with a size, gate foots are formed under the gate head in the lengthwise direction of the gate head so that it can function as a supporter. Thereby, it can be prevented that the gate of a device collapses in or after a process. The reliability of the device can be improved in or after the process.
申请公布号 KR20150096568(A) 申请公布日期 2015.08.25
申请号 KR20140017242 申请日期 2014.02.14
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 KIM, SEONG IL;KANG, DONG MIN;LEE, SANG HEUNG;AHN, HO KYUN;YOON, HYUNG SUP;MIN, BYOUNG GUE;LIM, JONG WON
分类号 H01L29/423;H01L29/778 主分类号 H01L29/423
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