SEMICONDUCTOR DEVICE HAVING STABLE GATE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
摘要
The present invention relates to a semiconductor device having stable gate structure and a method for manufacturing the same. In a gate structure which has a micro gate foot having a linewidth of 0.2μm or less and a gate head with a size, gate foots are formed under the gate head in the lengthwise direction of the gate head so that it can function as a supporter. Thereby, it can be prevented that the gate of a device collapses in or after a process. The reliability of the device can be improved in or after the process.
申请公布号
KR20150096568(A)
申请公布日期
2015.08.25
申请号
KR20140017242
申请日期
2014.02.14
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
发明人
KIM, SEONG IL;KANG, DONG MIN;LEE, SANG HEUNG;AHN, HO KYUN;YOON, HYUNG SUP;MIN, BYOUNG GUE;LIM, JONG WON