Methods, devices and systems using over-reset state in a memory cell

摘要

Memory cells, devices and methods are disclosed, including those that involve applying a waveform to a resistive memory cell to program the memory cell to an over-reset state representing a logic value.

主权项

1. A method, comprising:
applying a waveform to a resistive memory cell in a memory array to program the memory cell to an over-reset state representing a logic value, wherein the waveform has a single fall time that is longer than a corresponding fall time of a different waveform that has been applied to a different memory cell in the memory array for a reset state or a second over-reset state representing a second logic value and having a resistance higher than that of the over-reset state.