Buried waveguide photodetector

摘要

A method of forming an integrated photonic semiconductor structure having a photodetector and a CMOS device may include forming the CMOS device on a first silicon-on-insulator region, forming a silicon optical waveguide on a second silicon-on-insulator region, and forming a shallow trench isolation (STI) region surrounding the silicon optical waveguide such that the shallow trench isolation electrically isolating the first and second silicon-on-insulator region. Within a first region of the STI region, a first germanium material is deposited adjacent a first side wall of the semiconductor optical waveguide. Within a second region of the STI region, a second germanium material is deposited adjacent a second side wall of the semiconductor optical waveguide, whereby the second side wall opposes the first side wall. The first and second germanium material form an active region that evanescently receives propagating optical signals from the first and second side wall of the semiconductor optical waveguide.

主权项

1. A method of forming an integrated photonic semiconductor structure having a photodetector device and a CMOS device comprising:
forming a well region for the CMOS device; forming an isolation region for electrically isolating the photodetector device from the well region; forming a semiconductor optical waveguide for propagating optical signals; depositing, within the isolation region, germanium material adjacent to a first portion of opposing side walls of the semiconductor optical waveguide, the first portion of the opposing sidewalls being substantially parallel with a travel direction of the propagating optical signals within the optical waveguide; and depositing an oxide liner within the isolation region prior to the depositing of the germanium material, wherein the oxide liner separates the first portion of the opposing side walls of the semiconductor optical waveguide from the adjacent deposited germanium material, wherein the deposited germanium material forms an active region of the photodetector device for evanescently receiving the propagating optical signals from the first portion of the opposing sidewalls of the semiconductor optical waveguide structure.