发明名称 Carbon nano-tube (CNT) thin film treated with chemical having electron withdrawing functional group and manufacturing method thereof
摘要 Disclosed are a carbon nano-tube (CNT) thin film treated with chemical having an electron withdrawing functional group and a manufacturing method thereof. Specifically, the CNT thin film comprises a CNT composition to be applied on a plastic substrate. The CNT composition comprises a CNT; and chemical connected to the CNT and having an electron withdrawing functional group. In addition, the method for manufacturing a CNT thin film comprises steps of preparing a CNT; treating the CNT with chemical having an electron withdrawing functional group; mixing the CNT treated with the chemical with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; and forming a CNT thin film with the CNT dispersed solution. According to the CNT thin film and the manufacturing method thereof, a resistance of an electrode is decreased to improve the electric conductivity of the electrode.
申请公布号 US9117945(B2) 申请公布日期 2015.08.25
申请号 US200812031332 申请日期 2008.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 Shin Hyeon Jin;Yoon Seonmi;Choi Jaeyoung;Lee Young Hee;Choi Seong Jae;Kim Soo Min
分类号 C01B31/02;H01B1/04;H01L31/0224;B82Y20/00 主分类号 C01B31/02
代理机构 Cantor Colburn LLP 代理人 Cantor Colburn LLP
主权项 1. A carbon nano-tube (CNT) composition comprising: a CNT mixture comprising a metallic CNT and a semiconducting CNT; and a chemical connected to the metallic CNT by adsorption, wherein the chemical has an electron withdrawing functional group, wherein the functional group is one or more group selected from a group consisting of —CF3, —CN, —S═O, —SO3H, —NO2, —NR4+, —COR, —COOR, —CONR2, —F, —Cl, —I and —Br where R is H or selected from a group consisting of alkyl group or aryl group of C1-C15, wherein the electron withdrawing functional group attracts electrons from a backbone of the chemical, the backbone is resultantly deficient in electrons, the backbone is adsorbed on the metallic CNT surface to take electrons from the metallic CNT, thereby reducing a barrier between the metallic CNT and the semiconductor CNT, and increasing conductivity of the CNT mixture, further wherein the chemical is selected from a group consisting of dichloroethane, dibromoethane, iodobenzene, formic acid, acetic acid, formamide, nitromethane, nitrobenzene, nitric acid, acetonitrile, and benzonitrile and perfluoro alkane.
地址 KR