发明名称 | Carbon nano-tube (CNT) thin film treated with chemical having electron withdrawing functional group and manufacturing method thereof | ||
摘要 | Disclosed are a carbon nano-tube (CNT) thin film treated with chemical having an electron withdrawing functional group and a manufacturing method thereof. Specifically, the CNT thin film comprises a CNT composition to be applied on a plastic substrate. The CNT composition comprises a CNT; and chemical connected to the CNT and having an electron withdrawing functional group. In addition, the method for manufacturing a CNT thin film comprises steps of preparing a CNT; treating the CNT with chemical having an electron withdrawing functional group; mixing the CNT treated with the chemical with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; and forming a CNT thin film with the CNT dispersed solution. According to the CNT thin film and the manufacturing method thereof, a resistance of an electrode is decreased to improve the electric conductivity of the electrode. | ||
申请公布号 | US9117945(B2) | 申请公布日期 | 2015.08.25 |
申请号 | US200812031332 | 申请日期 | 2008.02.14 |
申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Shin Hyeon Jin;Yoon Seonmi;Choi Jaeyoung;Lee Young Hee;Choi Seong Jae;Kim Soo Min |
分类号 | C01B31/02;H01B1/04;H01L31/0224;B82Y20/00 | 主分类号 | C01B31/02 |
代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP |
主权项 | 1. A carbon nano-tube (CNT) composition comprising: a CNT mixture comprising a metallic CNT and a semiconducting CNT; and a chemical connected to the metallic CNT by adsorption, wherein the chemical has an electron withdrawing functional group, wherein the functional group is one or more group selected from a group consisting of —CF3, —CN, —S═O, —SO3H, —NO2, —NR4+, —COR, —COOR, —CONR2, —F, —Cl, —I and —Br where R is H or selected from a group consisting of alkyl group or aryl group of C1-C15, wherein the electron withdrawing functional group attracts electrons from a backbone of the chemical, the backbone is resultantly deficient in electrons, the backbone is adsorbed on the metallic CNT surface to take electrons from the metallic CNT, thereby reducing a barrier between the metallic CNT and the semiconductor CNT, and increasing conductivity of the CNT mixture, further wherein the chemical is selected from a group consisting of dichloroethane, dibromoethane, iodobenzene, formic acid, acetic acid, formamide, nitromethane, nitrobenzene, nitric acid, acetonitrile, and benzonitrile and perfluoro alkane. | ||
地址 | KR |