发明名称 Alignment to multiple layers
摘要 A method of aligning a new pattern to more than one previously defined pattern during the manufacture of an integrated circuit. A method of aligning a photolighography pattern reticle to a first previously defined pattern in a first direction and also aligning the photolithography pattern reticle to a second previously defined pattern in a second direction. A method of aligning a photolighography pattern reticle to two previously defined patterns in the same direction.
申请公布号 US9117775(B2) 申请公布日期 2015.08.25
申请号 US201213479951 申请日期 2012.05.24
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 Aton Thomas John;Prins Steven Lee;Jessen Scott William
分类号 H01L21/3213;G03F1/42;G03F9/00;H01L21/311;H01L21/768;H01L23/544;H01L21/28;H01L29/66 主分类号 H01L21/3213
代理机构 代理人 Garner Jacqueline J.;Cimino Frank D.
主权项 1. A method of fabricating an integrated circuit, comprising: forming a first patterned level having a first pattern in an integrated circuit chip and a first alignment mark separate from the first pattern and outside of the integrated circuit chip; forming, in a photoresist layer deposited on the integrated circuit chip, a second pattern and a second alignment mark separate from the second pattern and outside of the integrated circuit chip; aligning a reticle having a new pattern to the first alignment mark from the first patterned level and to the second alignment mark in the photoresist layer.
地址 Dallas TX US