发明名称 |
Alignment to multiple layers |
摘要 |
A method of aligning a new pattern to more than one previously defined pattern during the manufacture of an integrated circuit. A method of aligning a photolighography pattern reticle to a first previously defined pattern in a first direction and also aligning the photolithography pattern reticle to a second previously defined pattern in a second direction. A method of aligning a photolighography pattern reticle to two previously defined patterns in the same direction. |
申请公布号 |
US9117775(B2) |
申请公布日期 |
2015.08.25 |
申请号 |
US201213479951 |
申请日期 |
2012.05.24 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
Aton Thomas John;Prins Steven Lee;Jessen Scott William |
分类号 |
H01L21/3213;G03F1/42;G03F9/00;H01L21/311;H01L21/768;H01L23/544;H01L21/28;H01L29/66 |
主分类号 |
H01L21/3213 |
代理机构 |
|
代理人 |
Garner Jacqueline J.;Cimino Frank D. |
主权项 |
1. A method of fabricating an integrated circuit, comprising:
forming a first patterned level having a first pattern in an integrated circuit chip and a first alignment mark separate from the first pattern and outside of the integrated circuit chip; forming, in a photoresist layer deposited on the integrated circuit chip, a second pattern and a second alignment mark separate from the second pattern and outside of the integrated circuit chip; aligning a reticle having a new pattern to the first alignment mark from the first patterned level and to the second alignment mark in the photoresist layer. |
地址 |
Dallas TX US |