发明名称 Insulation material for integrated circuits and use of said integrated circuits
摘要 The invention relates to the fields of microelectronics and materials sciences and concerns an insulation layer material for integrated circuits in microelectronics, which can be used, for example, in integrated circuits as insulation material in semiconductor components. The object of the present invention is to disclose an insulation material for integrated circuits, which has dielectric constants of k≦2 with good mechanical properties at the same time. The object is attained with an insulation material for integrated circuits, containing at least MOFs and/or COFs.
申请公布号 US9117771(B2) 申请公布日期 2015.08.25
申请号 US201013202228 申请日期 2010.02.03
申请人 LEIBNIZ-INSTITUT FUER FESTKOERPER-UND WERKSTOFFFORSCHUNG DRESDEN E.V.;GLOBALFOUNDRIES INC. 发明人 Seifert Gotthart;Hermann Helmut;Zagorodniy Konstyantyn;Zschech Ehrenfried
分类号 E04B1/74;H01L21/312 主分类号 E04B1/74
代理机构 Greenblum & Bernstein, P.L.C. 代理人 Greenblum & Bernstein, P.L.C.
主权项 1. An integrated circuit comprising an insulation material, wherein the insulation material comprises an adhesive, and at least one MOF and/or at least one COF; whereinMOF means metallo-organic framework andCOF means covalent organic framework.
地址 Dresden DE