| 发明名称 | Mechanisms for forming stressor regions in a semiconductor device | ||
| 摘要 | A method of manufacturing a semiconductor device includes performing a pre-amorphous implantation (PAI) process to form an amorphized region on a substrate. The method also includes forming a stress film over the substrate, and performing an annealing process to recrystallize the amorphized region after the stress film is formed. The method further includes forming a recess region on the substrate. The recess region overlies the recrystallized region. The method additionally includes forming an epitaxial stress-inducing material in the recess region. | ||
| 申请公布号 | US9117745(B2) | 申请公布日期 | 2015.08.25 |
| 申请号 | US201414173370 | 申请日期 | 2014.02.05 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Tsai Chun Hsiung;Wang Tsan-Chun;Liu Su-Hao;Kwok Tsz-Mei;Wu Chii-Ming |
| 分类号 | H01L21/336;H01L21/8234;H01L21/22;H01L29/32;H01L29/78;H01L21/265;H01L29/06;H01L29/08 | 主分类号 | H01L21/336 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A method of manufacturing a semiconductor device, the method comprising: performing a pre-amorphous implantation (PAI) process to form an amorphized region on a substrate; forming a stress film over the substrate; performing an annealing process to recrystallize the amorphized region after the stress film is formed; forming a recess region on the substrate, wherein the recess region overlies the recrystallized region; and forming an epitaxial stress-inducing material in the recess region. | ||
| 地址 | TW | ||