Methods of forming fine patterns in integrated circuit devices

摘要

A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern. The etch mask patterns of the first and second mask structures are etched to partially remove the etch mask pattern from the second mask structure. Spacers are formed on opposing sidewalls of the first and second mask structures. The first mask structure is selectively removed from between the spacers in the first region to define a first mask pattern including the opposing sidewall spacers with a void therebetween in the first region, and a second mask pattern including the opposing sidewall spacers with the second mask structure therebetween in the second region.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming first and second mask structures on respective first and second regions of a feature layer, each of the first and second mask structures comprising a dual mask pattern and an etch mask pattern thereon having an etch selectivity relative to the dual mask pattern; etching the etch mask pattern of both the first and second mask structures to partially remove the etch mask pattern from the second mask structure such that at least a portion of the etch mask pattern of the second mask structure remains; forming spacers on opposing sidewalls of the first and second mask structures, wherein forming the spacers comprises:
forming a spacer mask layer on the first and second mask structures; andetching the spacer mask layer to form the spacers, the spacers including opposing first spacers covering sidewalls of the dual mask pattern of the first mask structure, opposing second spacers covering sidewalls of the dual mask pattern of the second mask structure, and opposing third spacers covering sidewalls of the portion of the etch mask pattern of the second mask structure,wherein etching the spacer mask layer comprises:
etching the spacer mask layer to form loop-shaped spacers;forming a separation mask pattern partially covering the loop-shaped spacers to expose portions of the loop-shaped spacers;selectively etching the exposed portions of the loop-shaped spacers using the separation mask pattern as a mask to form the spacers; andremoving the separation mask pattern; and selectively removing the first mask structure from between the spacers in the first region using the portion of the etch mask pattern of the second mask structure as a mask to define a first mask pattern comprising the opposing spacers with a void therebetween in the first region and a second mask pattern comprising the opposing spacers with the second mask structure therebetween in the second region.