发明名称 Volume select for affecting a state of a non-selected memory volume
摘要 Apparatuses and methods of operating memory are described. One such method can include receiving a select command at a plurality of memory volumes of a memory device, the select command indicating a targeted memory volume of the plurality of memory volumes. In response to the select command, the method can include selecting the targeted memory volume of the memory volumes and putting at least a portion of a non-selected memory volume of the memory volumes in a particular state based, at least in part, on a previous state of the non-selected memory volume and/or a portion of an address associated with the select command.
申请公布号 US9117504(B2) 申请公布日期 2015.08.25
申请号 US201313935318 申请日期 2013.07.03
申请人 Micron Technology, Inc. 发明人 Grunzke Terry M.
分类号 G11C8/00;G11C8/12;G11C16/10;G11C7/10;G11C5/14;G11C16/08 主分类号 G11C8/00
代理机构 Brooks, Cameron & Huebsch, PLLC 代理人 Brooks, Cameron & Huebsch, PLLC
主权项 1. A method of operating memory, comprising: receiving a select command and an associated select address at a plurality of memory volumes of a memory device, wherein a first portion of the select address indicates a targeted memory volume of the plurality of memory volumes; selecting the targeted memory volume responsive to the select command and the first portion of the select address; and putting at least a portion of a non-selected memory volume of the plurality of memory volumes in a particular state based, at least in part, on a second portion of the select address, wherein putting the at least portion of the non-selected memory volume of the plurality of memory volumes in the particular state based, at least in part, on the second portion of the select address further comprises putting the at least portion of the non-selected memory volume in a reduced power state based, at least in part, on the previous state of the at least portion of the non-selected memory volume being an active state.
地址 Boise ID US